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Congratulations to the authors of the publication: Ł. Gelczuk, M. Dąbrowska-Szata, Vl. Kolkovsky, M. Sochacki, J. Szmidt and T. Gotszalk.
“Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy” in the Journal of Applied Physics by the American Institute of Physics (IF = 2.3).