YOUR BROWSER IS OUT-OF-DATE.

We have detected that you are using an outdated browser. Our service may not work properly for you. We recommend upgrading or switching to another browser.

 

K72

Publication of the Department of Nanometrology in Ultramicroscopy

Date: 02.12.2020

Congratulations to Maciej Rudek and other co-authors of the publication of the work „Active calibration reference of minimized height for characterization of scanning thermal microscopy systems” in the renowned Ultramicroscopy (IF=2.5).

Low-strain sensor based on the flexible boron-doped diamondpolymer structures

M. Rycewicz, M. Ficek,  K. Gajewski, S. Kunuku, J. Karczewski, T. Gotszalk, I. Wlasny, A. Wysmołek, R. Bogdanowicz

A free-standing high boron-doped diamond nanosheet (BDDNS) has been fabricated for the development
of a flexible BDDNS strain senor. High boron-doped diamond was initially grown on a tantalum substrate
in a microwave plasma-assisted chemical vapor deposition method, and was then transferred to a Kapton
polymer substrate to fabricate the flexible BDDNS/Kapton device. Before performing the transfer process,
the thin BDDNS’s morphology and bonding structure on the top and bottom surfaces were investigated
using scanning electron microscopy and Raman spectroscopy. The contact potential difference and work
function values of the BDDNS top and bottom surfaces were measured using a Kelvin probe atomic force
microscope. Significant electrical conducting properties were observed from the resistance mapping of
the BDDNS foil, and the average resistance value of 31 U attained from the top surface of the BDDNS foil.
The electrical response of the BDDNS/Kapton device was investigated using a custom-made measurement
system and a positive residual resistance change with strain was observed. The developed BDDNS/
Kapton device was able to sustain for measuring up to 0.55% of strain, which indicates it may have great
potential to be utilized in low-strain sensor applications.

https://doi.org/10.1016/j.carbon.2020.11.071

Gallery

Politechnika Wrocławska © 2024