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Congratulations to M.Tamulewicz-Szwajkowska, K. Gajewski and other co-authors of the publication of the work „Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films” in the renowned Nanotechnology (IF=3.9). We wish everyone further scientific successes.
Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
S. Kunuku, M. Ficek , A. Wieloszynska, M. Tamulewicz-Szwajkowska, K. Gajewski, M. Sawczak, A. Lewkowicz, J. Ryl, T. Gotszalk, R. Bogdanowicz
Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C∼0.02 with three different B/C doping concentrations of B/C∼2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and unepitaxial diamond crystals with high surface roughness were observed for high B dopingconcentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C∼ 7500 ppm) have shown the low resistance value∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value∼16.55 Ω for CVD diamond/SCD Ib samples.
