Professional interests

Scientific goals realizing over the last years concerned:
optimization of epitaxial growth conditions, (regardless of the used epitaxial technique - MOVPE or MBE), and thus obtaining crystalline layers and semiconductor structures which are suitable for optoelectronic devices, such as photodetectors, photovoltaic cells and lasers,
optical and structural characterization of semiconductor heterostructures which provide basic feedback for optimization of epitaxy conditions, including alloy inhomogeneities identifications,
elaboration of rapid thermal annealing RTA conditions for structures with GaInNAs layers leading to partial reduction of structural defects and improvement of their emission properties,
development of technological procedures which allow or precipitate verification of correctness of undertaken actions on optimization and development of epitaxial processes and device structures,
optimizing the construction of optoelectronic devices, including construction of quantum wells and their electronic structures depending on the type of the device,
fabrication and characterization of optoelectronic devices.

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